Fuck this nigga Tioga

[Flak]

This giant fucking cunt decides that he's going to join the server and change the map to surf_sinister. So what does he do? 11 consecutive map change votes all with no. When I call him on his bullshit, banned. Fuck that.

[Tioga060]

Hi,

Nanowires and nanotubes may become important building
blocks for nanoscale optoelectronics,[1]since they can function
as miniaturized devices as well as electrical interconnects.
Nano-devices such as field-effect transistors,[2,3] single-electron transistors,[4,5] metal±semiconductor junctions,[6,7] and
intermolecular crossed junctions[8,9] have been demonstrated.
Many of these devices rely on binary switching, which is critical for important applications such as memory storage and
logic circuits. Switching on the nanometer and molecular level
has been predominantly achieved through proper electrical
gating, as exemplified by nanotube transistors.[2,3] However,
no attention has been given to the photoconducting properties
of nanowires despite the exciting possibilities for use in optoelectronic circuits. Here, we show the possibility of creating
highly sensitive nanowire switches by exploring the photoconducting properties of individual semiconductor nanowires.
The conductivity of the ZnO nanowires is extremely sensitive
to ultraviolet light exposure. The light-induced conductivity
increase allows us to reversibly switch the nanowires between
ªOFFº and ªONº states, an optical gating phenomenon analogous to the commonly used electrical gating.[2,3,10]
The ZnO nanowires used in the experiments were grown by
a vapor phase transport process developed in our lab.[11] The
diameters of these wires range from 50 to 300 nm. To characterize their photoconducting properties, the nanowires were
dispersed directly on pre-fabricated gold electrodes. Alternatively, electron-beam lithography was used to fabricate gold
electrodes on top of the nanowires. Field-emission scanning
electron microscopy (FE-SEM) was used to image the ZnO
nanowire devices. Electrical resistivity measurements were
performed in a four-terminal configuration in air, nitrogen, or
vacuum environments.
Four-terminal measurements of individual ZnO nanowires
indicate that they are highly insulating in the dark with a resistivity above 3.5 MXcm. When the nanowires are exposed to
ultraviolet (UV)-light with wavelengths below 380 nm (handheld UV-lamp, 0.3 mW cm±2, 365 nm), the nanowire resistivity
decreases by typically 4 to 6 orders of magnitude. Figure 1
compares the current±voltage (I±V) curves measured on a
60 nm nanowire in the dark and upon UV-light exposure. A
larger photoresponse was detected at higher bias. We notice
that the I±V curve for the UV-exposed nanowire exhibits nonlinear behavior.

[Sacred]

Termination vote: tioga.

[Flak]

Termination vote: tioga.
This, please.